Overview of ALD-Driven Oxide Semiconductors for High Density, Low Power Memory Architectures (imec, Hanyang Univ.)
Researchers from imec and Hanyang University published a technical paper titled "Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement and Challenges." The paper explores the evolution of oxide semiconductors (OSs) from display backplane materials to potential candidates for advanced memory and logic devices. It highlights the low leakage current and compatibility with three-dimensional (3D) architectures of OSs, sparking interest in their use in semiconductor applications. The review delves into atomic layer deposition (ALD) as a core technique for growing high-quality OS films, covering basic and advanced processes compatible with 3D scaling. Challenges in memory applications, such as contact resistance and lack of p-type materials, are discussed, along with the feasibility of ALD-grown OSs as solutions. The paper provides an outlook on the role of ALD-grown OSs in next-generation semiconductor memory technologies.
