On-Current Performance of Ultra-Scaled NSFETs With Source/Drain Underlap Doping (Global TCAD Solutions, TU Wien)

Researchers from Global TCAD Solutions GmbH and TU Wien published a technical paper on the on-current performance of ultra-scaled nanosheet FETs with source/drain underlap doping. The study explores the impact of underlap doping on device performance, specifically addressing anomalous saturation behavior observed in such devices. By simulating the transport physics in nanosheet FETs, the researchers found that secondary barriers in underdoped source/drain extensions enhance transport, even in the linear regime, explaining the observed saturation behavior. The insights from this study provide guidance for optimizing source/drain underlap doping profiles to prevent on-current degradation.