Imec's new post-exposure bake method speeds up EUV chipmaking tools, boosting production for the most advanced chips — 20% gain in photoresist improvement from increased oxygen concentration

Imec has developed a new method that enhances the photo-speed of metal-oxide resist (MOR) by increasing oxygen concentration during the EUV post-exposure bake (PEB) step, leading to a 15%-20% improvement in photo-speed. This advancement allows the resist to reach target dimensions at a lower EUV dose, boosting EUV scanner throughput and reducing exposure costs. Metal-oxide resists are becoming crucial for advanced chip production using EUV lithography due to their high resolution and favorable characteristics. Imec's findings suggest that optimizing environmental conditions during the PEB step can further enhance MOR performance, potentially impacting semiconductor manufacturing processes.