IBM and Lam Research team up on High NA EUV dry resist to push chip scaling past 1nm

IBM and Lam Research are collaborating to develop materials and processes to enable logic chips to scale beyond 1nm using High NA EUV lithography and Lam's Aether dry resist technology. This partnership builds on their previous work on 7nm process development and nanosheet transistor architecture. The focus will now be on validating full process flows for nanosheet and nanostack device architectures and backside power delivery. Lam's Aether dry resist technology, which absorbs more EUV light and reduces exposure dose, aims to address challenges in high-NA EUV lithography. The collaboration aims to accelerate the industry adoption of High NA EUV for next-generation interconnect and device patterning.