FeFETs With Laminated Gate Stacks For Radiation Resilience in Vertical NAND (Georgia Tech)

Researchers at Georgia Tech published a technical paper on utilizing FeFETs with laminated gate stacks to enhance radiation resilience in vertical NAND technology. The study demonstrates that these FeFETs can withstand ionizing radiation doses up to 10 Mrad(air) while maintaining memory window integrity and robust switching. Compared to traditional charge-trap NAND, laminated FeFETs exhibit significantly lower threshold voltage degradation per unit dose, making them promising candidates for radiation-resilient storage solutions. The research highlights the potential of this technology for data-intensive AI applications in space and defense sectors.