High-NA EU Lithography: Extending The STCC Formula (Science Tokyo)

Researchers at the Institute of Science Tokyo have published a technical paper on high-NA EU lithography, focusing on the impact of polarization in extreme ultraviolet lithography. The paper aims to extend the STCC formula to include polarization effects for more accurate simulations in high-NA EUV lithography. This work was presented at SPIE Advanced Lithography + Patterning 2026 and is available in the Journal of Micro/Nanopatterning, Materials, and Metrology. The authors include Hiroyoshi Tanabe, Moe Sugiyama, Masayuki Shimoda, and Atsushi Takahashi.