An Overview Of Recent Progress On The EUV + DSA Strategy (Univ. of Chicago, Berkeley Lab, Argonne)
Researchers from the University of Chicago, Lawrence Berkeley National Laboratory, and Argonne National Laboratory have published a technical paper on the "Directed self-assembly of block copolymers for high-precision patterning in the era of extreme ultraviolet lithography." The paper discusses the challenges faced by extreme ultraviolet (EUV) lithography in developing resist materials for high-precision patterning and how directed self-assembly (DSA) of block copolymers (BCPs) can offer a solution. The overview covers recent progress on the EUV + DSA strategy, focusing on advancements in BCP material design, processing, metrology, and pattern transfer. Key highlights include advances in high-χ BCPs with perpendicular orientation, chemical pre-pattern fabrication, and pattern transfer strategies for semiconductor manufacturing.