Six-Stack Vertically Integrated Hybrid Platform For Large Area Electronics (KAUST, Imperial College Et Al.)

Researchers from KAUST, Imperial College London, and the University of Manchester have published a technical paper on a new six-stack vertically integrated hybrid complementary transistor technology for large-area electronics. The technology combines n-type metal oxide thin-film transistors and p-type organic thin-film transistors in a vertical stacking configuration. The paper demonstrates the performance of 600 transistors and 300 hybrid inverters, showcasing comparable field-effect mobilities and saturation currents. The technology shows promise for various large-area electronics applications, although further thermal optimization is needed for standard industrial conditions.