SiGeSn SBFETs at Cryogenic Temperatures (Tu Wien et al)

Researchers from TU Wien, Johannes Kepler University, Universidad de Granada, and Max Planck Institute for Sustainable Materials published a technical paper on "A Cryogenic Ultra-Thin Body SiGeSn Transistor." The paper discusses the development of transistors capable of operating at cryogenic temperatures, essential for efficient qubit control in quantum computing. By enhancing Si-based Schottky junction field-effect transistors with ultra-thin SiGeSn layers and utilizing a multi-gate transistor architecture, significant performance improvements were achieved. The research demonstrated enhanced drain current modulation, improved subthreshold slopes, and reduced threshold voltages at cryogenic temperatures, making the system promising for cryogenic computing applications.