Scaling Nanoribbon Transistors Based on Monolayer 2D Semioconductors (Stanford, HORIBA, SLAC)

Researchers from Stanford University, HORIBA Scientific, and SLAC National Accelerator Laboratory published a technical paper on scaling nanoribbon transistors using monolayer transition metal dichalcogenides. The paper discusses the fabrication of nanoribbon transistors with channel widths down to 25 nm and lengths down to 50 nm, achieving high on-state currents for both n- and p-type devices. The use of monolayer 2D semiconductors in nanoribbon transistors shows promise for future nanosheet transistor applications. The research demonstrates advancements in scaling down transistor dimensions while maintaining good performance.