Rutile TiO2 As A Post-ZrO2 Dielectric Platform for Next-Gen DRAM Capacitors (KIST)

Researchers at the Korea Institute of Science and Technology (KIST) have published a technical paper on using Rutile TiO2 as a post-ZrO2 dielectric platform for next-generation DRAM capacitors. As DRAM technology advances into sub-10 nm nodes, capacitor scaling faces challenges due to footprint loss and thickness limitations. Rutile TiO2 is proposed as a viable alternative to ZrO2, offering high permittivity for sub-0.3 nm equivalent oxide thickness (EOT) while maintaining process simplicity. The paper discusses the integration pathways for low-temperature rutile stabilization and leakage control strategies to make Rutile TiO2 a scalable DRAM dielectric platform.