Research Bits: Dec. 16

Researchers from MIT and the University of Waterloo propose a back-end integration platform for transistors and memory devices on a single chip using amorphous indium oxide. The team optimized the fabrication process to create 2nm thick indium oxide transistors with integrated memory components. Another research team from UC Santa Barbara, Tohoku University, and TSMC introduces all-digital probabilistic computing using magnetic tunnel junctions for improved AI efficiency. Additionally, researchers from the University of Warwick and National Research Council of Canada develop a high-mobility semiconductor using compressively strained germanium epilayer on silicon, showing promise for large-scale integrated circuits.