Overcoming BEOL Patterning Challenges At The 3nm Node

The article discusses the challenges in Back-End-of-Line (BEOL) patterning at the 3nm node in semiconductor manufacturing. As CMOS technology continues to shrink, achieving critical dimensions and pitch requirements becomes more demanding. At the 3nm node, securing process margins for critical dimensions and edge placement error (EPE) is crucial. The article highlights the use of virtual fabrication to assess EPE and successfully pattern an 18- and 16-nm metal pitch BEOL. Through simulations, significant process parameters impacting EPE and line dimensions were identified, emphasizing the importance of process control for successful patterning at advanced nodes.