Next-gen MRAM breakthrough can flip bits at SRAM-rivalling speeds with low power consumption — researchers claim true next-gen breakthrough using Tungsten layer

Researchers have made a breakthrough in MRAM development, introducing a spin-orbit torque MRAM (SOT-MRAM) that offers fast switching speeds of ~1ns and data retention exceeding 10 years. By incorporating a tungsten layer, the team achieved stability crucial for enhanced performance, a key step towards mass production of SOT-MRAM devices. Collaborating institutions include NYCU, TSMC, ITRI, NSRRC, Stanford University, and NCHU in Taiwan. The new SOT-MRAM is designed for large-scale integration in semiconductor industry-compatible processes, targeting AI data centers and low-power computing applications.