Nanoscale MoS₂-based Memristors Integrated into CMOS Microchips

A technical paper titled "Integration of Low-Voltage Nanoscale MoS2 Memristors on CMOS Microchips" was published by RWTH Aachen and Forschungszentrum Jülich GmbH. The paper discusses the integration of molybdenum disulfide (MoS2) memristors onto silicon CMOS microchips, showcasing forming-free, nonvolatile resistive switching with low operating voltages and cycle-to-cycle variability. The nanoscale MoS2-based memristors were integrated in the back-end-of-line of 350nm-technology CMOS microchips, demonstrating high repeatability across multiple cycles and devices. This work represents a significant advancement in integrating MoS2-based nonvolatile memristive devices into CMOS microchips.