MFMIS FeTFETs For Energy-Efficient, Scalable CIM Hardware Accelerators (Seoul National University)

Researchers at Seoul National University have published a technical paper on the impact of random phase distribution on ferroelectric tunnel field-effect transistors (FeTFETs) for compute-in-memory applications. FeTFETs exhibit device-to-device variation, which can be mitigated by a metal–FE–metal–insulator–semiconductor (MFMIS) structure. This structure helps equalize channel potential and ensure uniform electrical characteristics. System-level simulations show that MFMIS FeTFETs offer energy-efficient and scalable solutions for compute-in-memory hardware, achieving binary neural network accuracy comparable to dual-FeFETs with superior energy and area efficiency.