Kioxia's next-gen 3D NAND production gets expedited to 2026, report claims — high-capacity 332-layer BiCS10 devices to sate growing demand from AI data centers

Kioxia is reportedly expediting the production of its next-generation 3D NAND memory, including the high-capacity 332-layer BiCS10 devices, to meet the increasing demand from AI data centers. The company will use different fab sites for producing BiCS9 and BiCS10 memory, with the new 332-layer BiCS10 memory expected to be in production by 2026 instead of the initially planned 2027. Both BiCS9 and BiCS10 utilize the CBA architecture and feature a 4.8 GT/s Toggle DDR 6.0 interface, targeting different applications. Kioxia's Toggle DDR 6.0 interface aims to enhance performance for both generations of 3D NAND, with BiCS10 offering lower latency and power consumption improvements.