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Interplay Between the Row Hammer Effect and Floating Body Effect in Monolithic 3D Stackable 1T1C DRAM (Georgia Tech)

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SemiEngineering

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Researchers at Georgia Institute of Technology published a technical paper on the "Interplay Between the Row Hammer Effect and Floating Body Effect in Monolithic 3D Stackable 1T1C DRAM." The study focuses on the reliability of this emerging technology, highlighting the interaction between the row hammer effect and the floating body effect. The research indicates that the row hammer effect, caused by charge migration, is less severe in 3D DRAM compared to 2D DRAM. However, the study found that the floating body effect, exacerbated by capacitive coupling between stacked cells, poses challenges. The paper delves into the impact of key device parameters on the floating body effect.

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