Intel is co-developing new Z-Angle Memory to compete with HBM used in AI data centers — vertically-stacked memory touts 2 to 3x more capacity, greater bandwidth, and half the power consumption

Intel and SoftBank subsidiary Saimemory are collaborating on Z-Angle Memory (ZAM), a vertically-stacked memory technology aimed at competing with High Bandwidth Memory (HBM) in AI data centers. ZAM promises 2-3 times more capacity, greater bandwidth, and half the power consumption of HBM. Leveraging Intel's packaging technologies and Japanese patents, the companies aim to revolutionize memory technology. ZAM, built on Intel's NGDB initiative, offers improved DRAM performance, reduced power consumption, and optimized costs. Saimemory plans to produce the first ZAM prototype by 2027, with mass production targeted for 2029, involving partnerships with other tech firms and Japanese institutions.