Intel details progress on fabbing 2D transistors a few atoms thick in standard high volume fab production environment — chipmaker outlines 300-mm fab compatible with integration of 2D transistor contacts and gate stacks

Intel Foundry and imec have made progress in integrating 2D transistors into standard high-volume fab production environments, demonstrating a 300-mm fab compatible with 2D transistor contacts and gate stacks. The industry is moving towards 2D materials like transition-metal dichalcogenides (TMDs) to address limitations in silicon channels due to scaling. Intel's innovative contact and gate-stack integration scheme aims to overcome challenges in developing 2D field-effect transistors (2DFETs) for future chip production. This work aims to de-risk the development of chips relying on 2D materials and accelerate device benchmarking and design exploration. Intel's strategy involves early collaboration with partners like imec to address manufacturing challenges associated with 2D materials before they become necessary.