Technology

Impact Of The Film Transfer And Grain Size On The Cu-barrier Properties Of 2D WS2 Films (NUS et al.)

Source

SemiEngineering

Published

Jan 29, 2026

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AI Generated

Researchers from the National University of Singapore, AIXTRON, IMiF, and Applied Materials published a technical paper on enhancing the Cu-barrier properties of 2D-WS2 barriers. They explored the role of grain size and surface passivation in maximizing the efficiency of 2D films for back-end-of-line metal interconnects. The study focused on large grain WS2 films and demonstrated that hydrogen disulfide passivation can help overcome film transfer challenges. Results showed that large grain size 2D films exhibit enhanced barrier efficiency compared to commercially available TaN systems, proving their advantage in reducing metal diffusion in BEOL dielectrics.

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