HBM undergoes major architectural shakeup as TSMC and GUC detail HBM4, HBM4E and C-HBM4E — 3nm base dies to enable 2.5x performance boost with speeds of up to 12.8GT/s by 2027

High-bandwidth memory (HBM) is undergoing significant changes with the introduction of HBM4, HBM4E, and C-HBM4E, set to hit the market by 2026 and 2027. These new iterations will feature a 2,048-bit interface and advanced logic technologies, promising a 2.5x performance boost with speeds of up to 12.8 GT/s. HBM4 will double concurrency to 32 independent channels per stack, supporting configurations for up to 64 GB capacities. Additionally, HBM4E will offer 2.5x higher bandwidth than HBM3E, with improved power efficiency and area efficiency. C-HBM4E introduces customizable base dies, allowing for the integration of custom logic directly into memory devices, potentially revolutionizing memory subsystems.