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Cryogenic Etch: A Key Enabler Of 3D NAND

Source

SemiEngineering

Published

TL;DR

AI Generated

The article discusses how cryogenic etching is a crucial technology for enabling the production of next-gen 3D NAND flash memory. It highlights the rapid advancements in NAND technology, with each new generation offering faster read/write speeds, greater bit density, lower latency, and improved power efficiency. Cryogenic etching allows for the creation of deep and thin cavities in memory cells, crucial for achieving high performance. The article also delves into the challenges faced by NAND manufacturers in maintaining vertical profiles and optimizing etch recipes. Additionally, it mentions key players in the 3D NAND market and the importance of AI in optimizing etching processes.