Chinese scientists discover method to cut defects by 99% with DUV chipmaking equipment, but it destroys EUV pattern fidelity — analyzing photoresist clustering with cryo-ET at 105°C

Chinese scientists have discovered a method using DUV chipmaking equipment to reduce defect density by up to 99%, but this process compromises EUV pattern fidelity. By analyzing photoresist clustering with cryo-ET at 105°C, researchers from Peking University and Tsinghua University found that increasing the post-exposure bake temperature and maintaining a continuous developer layer can significantly cut defects on 300mm wafers. However, the practical implications of this research are limited as chipmakers already carefully select PEB temperatures for optimal results. While the study provides valuable insight into photoresist behavior during development, its impact on semiconductor manufacturing is constrained, particularly for advanced nodes using EUV lithography.