Chinese researchers hail breakthrough in DRAM-like cells, which could be used in embedded or 3D stacked memory — absence of manufacturing detail casts doubt on mass production

Chinese researchers have developed a capacitor-less DRAM-like memory cell using a unique architecture with two transistors, promising reliable multi-bit storage and fast write times. While not a DRAM replacement, this technology could be suitable for embedded DRAM and stacked 3D memory applications. The breakthrough, developed by the National Key Laboratory of Integrated Circuit Manufacturing Technology, utilizes a self-aligned single-step process and dual-gate transistors for improved control and stability. The memory cell demonstrates 2-bit storage per cell, 50ns write times, and data retention of up to 500 seconds, with stable operation under thermal stress. However, questions remain about the practicality and mass production feasibility of this innovative memory architecture.