Better Contact Resistance in Top-Gate CNFETs through Self-Aligned MoOx Nanoparticle Contact Doping (NYCU et al.)

Researchers at National Yang Ming Chiao Tung University and National Center for Instrumentation Research have published a technical paper on improving contact resistance in top-gate carbon nanotube transistors (CNFETs) using self-aligned MoOx nanoparticle contact doping. The study addresses the issue of high contact resistance in CNFETs, which hampers device performance, by employing numerical modeling and experimental validation with MoOx-doped contacts. The results show a 58% reduction in contact resistance, increased output current, and a lowered Schottky barrier height. This research demonstrates the effectiveness of self-aligned MoOx contact doping as a scalable solution to mitigate contact resistance in CNFETs.